High sensitivity sensor for tagged magnetic bead bioassays

ABSTRACT

The preferred embodiments of the present invention use MRAM technology to detect a shift in the magnetic switching field of a sensor. The shift in the magnetic switching field is caused by the presence of magnetic tagged beads. By measuring the magnitude of the shift in the magnetic field and correlating the magnitude of the shift to the presence of the target molecules, accurate measurements regarding the presence of the target molecules can be made.

TECHNICAL FIELD

The present invention generally relates to magnetoelectronics, and moreparticularly to a magnetoelectronic field sensor used in bioassays.

BACKGROUND OF THE INVENTION

Binding bioassays such as immunoassays, DNA hybridization assays, andreceptor-based assays are widely used as diagnostic tests for a widerange of target molecules. Binding assays exploit the ability of certainmolecules, herein referred to as “binding molecules,” to specificallybind target molecules. Binding molecules such as antibodies, strands ofpolynucleic acids (DNA or RNA) and molecular receptors, are capable ofselectively “binding” to such potential target molecules as polynucleicacids, enzymes and other proteins, polymers, metal ions, and lowmolecular weight organic species such as toxins, illicit drugs, andexplosives.

In a solid-phase binding assay, binding molecules are attached to asolid substrate, a procedure generally performed by the manufacturer ofthe assay. These binding molecules are referred to as “capture”molecules. When the user initiates the assay by exposing the solidsubstrate to a liquid sample, capture molecules immobilize target and/orlabel molecules on the surface via recognition events.

Through the use of labeled binding molecules, such recognition eventscan be made to generate a measurable signal and thereby indicate thepresence or absence of a target molecule. Various types of bindingassays have been devised that use radioactive, fluorescent,chemiluminescent, magnetic and/or enzymatic labels. Depending on thetype of assay being performed, labeled binding molecules either bind toimmobilized target molecules, i-e., a “sandwich” assay, or compete withtarget molecules to bind to capture molecules, i.e., a “competitive”assay. After removal of excess label from the sample, the amount ofbound label may be measured.

In addition to the typical binding assays described above, newtechnologies have created additional ways to identify the targetmolecules in bioassays. In one specific example, certain nanoscalemagnetic beads have successfully been utilized to detect the presence ofvarious target molecules in bioassays. In this application, the magneticbeads, typically a magnetite Fe₂0₃ bead, are activated or “tagged” witha biochemical coating that selectively bonds with the biomolecule ofinterest in a given solution. Once tagged in this fashion, the magneticbeads are placed into the solution where they diffuse to amagnetoresistive sensor and attach themselves to a molecule-specificbiochemical coating. The presence, or non-presence, of the tagged beadsat the magnetoresistive sensor can be measured based upon the magneticproperties of the beads.

The magnetoresistive sensor can detect changes in the GiantMagnetoresistance (GMR) that is directly related to the influence of thefringing magnetic fields emanating from the beads that are attached tothe biochemical coating in relatively close proximity to themagnetoresistive sensor. These magnetite beads are typically about 1-2micrometers in diameter. These relatively large beads are necessary,given the relatively low sensitivity of the GMR sensor. It should benoted that larger beads can be used to enhance the signal, but largerbeads will also tend to produce non-specific binding. Non-specificbinding reduces both sensitivity and selectivity and typically increasesas the beads increase in size. In addition, several target molecules maybe required to adequately bind a larger bead and this may also reducesensitivity since the presence of a single bead does not indicate thepresence of a single target molecule unless it can be bound to only onetarget molecule.

While the use of magnetic beads to detect target molecules in a solutionhas been successfully demonstrated, certain practical implementationdetails have suggested probable limitations on the current technology.For example, the GMR sensor sensitivity is somewhat limited and,accordingly, may limit the ability of the sensor to detect relativelylow levels of target molecules in a given solution. The GMR sensorsensitivity is a function of GMR magnitude (maximum resistance change)and the magnetic field response (slope of the magnetic resistanceassociated with the magnetic field). Presently known GMR sensors havedemonstrated a sensitivity of approximately 1-microvolt signal for asingle bead. Accordingly, it is possible that relatively small amountsof a target molecule in a solution remain undetectable using thepresently known GMR sensors.

In view of the foregoing, it should be appreciated that it would bedesirable to enhance the accuracy and sensitivity of bioassays performedusing magnetic labels. In addition, it would be desirable to provide newmethods and techniques for fabricating sensors without requiring theaddition of new and costly procedures. Furthermore, additional desirablefeatures will become apparent to those skilled in the art from thedrawings, foregoing background of the invention, following detaileddescription of the drawings, appended claims, and abstract of theinvention.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will hereinafter be described in conjunction withthe appended drawing figures, wherein like numerals denote likeelements, and:

FIG. 1 is a representation of a multi-layer magnetic element suitablefor use with a magnetoresistive sensor in accordance with a preferredexemplary embodiment of the present invention;

FIG. 2 is a hysteresis curve for the baseline magnetic switching fieldof a magnetic element according to a preferred exemplary embodiment ofthe present invention;

FIG. 3 is the hysteresis curve of FIG. 1 in the presence of an alteredmagnetic switching field;

FIG. 4 is a wave diagram for a biomolecule detection method according toa preferred exemplary embodiment of the present invention;

FIG. 5 is a switching diagram for an MRAM element according to apreferred exemplary embodiment of the present invention;

FIG. 6 is the wave diagram of FIG. 4 after the introduction of abiomolecule;

FIG. 7 is the switching diagram of FIG. 5 when detecting the presence ofa magnetic bead in accordance with a preferred exemplary embodiment ofthe present invention; and

FIG. 8 is a flow chart of a method for detecting biomolecules accordingto a preferred embodiment of the present invention.

DETAILED DESCRIPTION OF THE DRAWINGS

Typically, a magnetic element, such as a Magnetoresistive Random AccessMemory (MRAM) element, has a structure that includes ferromagneticlayers separated by at least one non-magnetic layer. Information isstored as directions of magnetization vectors in the magnetic layers.Magnetic vectors in one magnetic layer, for instance, are magneticallyfixed or pinned, while the magnetization direction of the other magneticlayer is free to switch between the same and opposite directions thatare called “parallel” and “antiparallel” states, respectively. Inresponse to parallel and antiparallel states, the magnetic memoryelement represents two different resistances. The resistance has minimumand maximum values when the magnetization vectors of the two magneticlayers point in substantially the same and opposite directions,respectively.

Accordingly, a detection of change in resistance allows a device, suchas an MRAM element, to provide information stored in the magnetic memoryelement. The difference between the minimum and maximum resistancevalues, divided by the minimum resistance is known as themagnetoresistance ratio (MR). Additional details regarding MRAM elementscan be found in U.S. Pat. No. 6,250,052, which patent is incorporatedherein by reference.

Referring now to FIG. 1, a magnetic element 100 suitable for use with apreferred exemplary embodiment of the present invention is shown. Thestructure of magnetic element 100 includes a substrate 112, a firstelectrode multilayer stack 114, a spacer layer 116, and a secondelectrode multilayer stack 118. It should be understood that thematerial composition of magnetic element 100 is dependent upon the typeof magnetic element being fabricated and many variations are possible.The specific example given here is for illustration only and thoseskilled in the art will recognize that other magnetic elements, somewith fewer layers and some with more layers, may be utilized withoutdeparting from the scope of the present invention.

More particularly, in one embodiment, spacer layer 116 is formed of adielectric material, and in another embodiment, spacer layer 116 isformed of a conductive material. First electrode multilayer stack 114and second electrode multilayer stack 118 include one or moreferromagnetic layers. First electrode multilayer stack 114 is formed ona base metal layer 113, which is formed on substrate 112. Base metallayer 113 may be composed of a single metal material or layer or a stackof more than one metal material or layer. First electrode multilayerstack 114 includes a first seed layer 120, deposited on base metal layer113, a template layer 122, a layer of antiferromagnetic (AF) pinningmaterial 124, and a fixed ferromagnetic layer 126 formed on and exchangecoupled with the underlying AF pinning layer 124.

In at least one preferred embodiment of the present invention, seedlayer 120 is preferably formed of platinum (Pt), tantalum (Ta), or mostpreferably tantalum nitride (TaNx). In this embodiment, template layer122 is fabricated from a conductive material, preferably a nickel, iron,cobalt (NiFeCo) alloy or ruthenium (Ru), is then deposited over seedlayer 120.

The combination of seed layer 120 and template layer 122 provide thebase for AF pinning layer 124. After the formation of seed layer 120 andtemplate layer 122, AF pinning layer 124 is fabricated from a conductivematerial, such as an iridium manganese (IrMn) alloy. Ferromagneticlayers 125 and 126 are described as fixed, or pinned, in that themagnetic moment for these layers is prevented from rotation in thepresence of an externally applied magnetic field.

In the most preferred embodiments of the present invention,ferromagnetic layers 125 and 126 are separated by coupling layer 123.Coupling layer 123 is most preferably comprised of ruthenium (Ru),rhodium (Rh), osmium (Os), copper (Cu) or the like. Combined withferromagnetic layers 125 and 126, coupling layer 123 creates a syntheticantiferromagnet (SAF) free layer. The antiferromagnetic couplingprovided through layer 123 makes magnetic element 100 more stable inapplied magnetic fields.

Second electrode stack 118 includes a free ferromagnetic layer 128 and aprotective contact layer 130. The magnetic moment of the freeferromagnetic layer 128 is not fixed, or pinned, by exchange coupling,and is therefore free to rotate in the presence of an applied magneticfield.

It should be understood that a reversed, or flipped, structure is alsoanticipated by this disclosure. More particularly, it is anticipatedthat the disclosed magnetic element can be formed to include a topfixed, or pinned layer, and thus be described as a top pinned structure.

Referring now to FIG. 2, a hysteresis curve 200 for a typical MRAMelement is depicted. As shown in FIG. 2, curve 200 is substantiallyrectangular in shape. The points labeled−|H_(c)| and |H_(c)| representthe boundaries for the switching of the state of the MRAM element. Asshown in FIG. 2, the curve is centered about the X and Y axes.

Referring now to FIG. 3, hysteresis curve 200 of FIG. 2 is shown afterthe introduction of some number of magnetic beads to themagnetoresistive sensor employing the MRAM element. As shown in FIG. 3,when the magnetic beads bind to the magnetoresistive sensor, hysteresiscurve 200 shifts by a distance 300, due to the fringe magnetic fieldassociated with the magnetic beads captured at the magnetoresistivesensor. As shown in FIG. 3, points labeled−|H_(c)+H_(BEAD)| and|−H_(c)−H_(BEAD)| represent the new boundaries for the switching of themagnetic state of the MRAM element, after the introduction of themagnetic beads. Distance 300 represents the change in the magneticswitching field due to the presence of the magnetic beads. The shift iscaused by the presence of the magnetic beads localized near one end ofthe sensor.

The shift associated with distance 300 in hysteresis curve 200 can becorrelated to the presence of the magnetic beads that are bound to thetarget molecules, which have been bound to the magnetoresistive sensor.Accordingly, the presence of the magnetic beads corresponds to thepresence of the target molecule and the amount of the shift inhysteresis curve 200 can be used to determine the amount of targetmolecules present. In certain circumstances, in addition to exhibitingthe shift described above, the shape of hysteresis curve 200 may alsochange.

Referring now to FIG. 4, an amplitude diagram 400 for the switchingcurrent of an MRAM element incorporated into a magnetoresistive sensoraccording to a preferred exemplary embodiment of the present inventionis shown. Switching points 410, 420, 430, and 440 represent the currentlevels and the points in time for the state of the MRAM element toswitch from the “parallel” state to the “antiparallel” state or viceversa. It should be noted that while the current embodiment depicts atriangular modulation scheme for the current supplied to the MRAMelement, other modulation schemes known to those skilled in the art mayalso be employed. As shown in FIG. 4, switching points 410, 420, 430,and 440 depict a certain symmetry.

Referring now to FIG. 5, the switching activity of an MRAM elementoperating without the presence of a magnetic bead is depicted as afunction of resistance over time. Prior to reaching switching point 450,the measured resistance of the MRAM element is stable and no switchingtakes place. However, as the amplitude is increased, it will eventuallyreach the threshold for necessary to change the state of the MRAMelement. When the amplitude ramp reaches that point, as represented byswitching point 450, the MRAM element will begin to alternatively switchfrom a high resistance level 470 (first resistance level) to a lowresistance level 480 (second resistance level) and back again at thesame frequency as the modulation frequency.

Eventually, as the amplitude ramp is decreased, the magnetic switchingfield will once again decrease below the switching threshold, asrepresented by switching point 460, and the MRAM element will stopswitching and return to a stable measured resistance level. The timebetween the point where the MRAM element starts switching and the pointwhere the MRAM element stops switching can be designated as Δt.

Referring now to FIG. 6, amplitude diagram 400 of FIG. 4 is shown withthe addition of a number of magnetic beads attached to themagnetoresistive sensor. As shown in FIG. 5, switching points 410, 420,430, and 440 are no longer symmetrical in the way depicted in FIG. 4.The movement of switching points 410, 420, 430, and 440 represents achange in time for the MRAM element to switch from the “parallel” stateto the “antiparallel” state or vice versa. This change represents theshift depicted in FIGS. 2 and 3 due to the presence of the magneticbeads. In this case, the time relation of the switch event to theamplitude ramp is the measure of the field shift and represents thedetection of the magnetic beads. By calibrating the modulation of theamplitude current, a correlation can be made to the number of magneticbeads detected.

Referring now to FIG. 7, the switching activity of the MRAM element ofFIG. 5, in the presence of one or more magnetic beads is depicted as afunction of resistance over time. Prior to reaching switching point 450,the measured resistance of the MRAM element is stable and no switchingtakes place. However, as the amplitude is increased, it will eventuallyreach the threshold for necessary to change the state of the MRAMelement. When the amplitude ramp reaches that point, as represented byswitching point 450, the MRAM element will begin to alternatively switchfrom a high resistance level 470 to a low resistance level 480 and backagain at the same frequency as the modulation frequency.

Eventually, as the amplitude is decreased, the magnetic switching fieldwill once again decrease below the switching threshold, as representedby switching point 460, and the MRAM element will stop switching andreturn to a stable measured resistance level. The time between the pointwhere the MRAM element starts switching and the point where the MRAMelement stops switching can be designated as Δt. As can be seen byreferring to both FIG. 5 and FIG. 7, Δt is smaller in the presence ofone or more magnetic beads. This difference can be correlated to providea measurement for the number of beads present and, by extension, theamount of target molecule present in the sample as well. The variance inΔt will be determined by the number of magnetic beads attached to thesensor device containing the MRAM element. Accordingly, by implementingthe methodologies described herein, the sensor circuit incorporating theMRAM element need only be able to detect the onset and cessation of theswitching of the MRAM element relative to the amplitude ramp of themodulation current.

Referring now to FIG. 8, a method 800 for using an MRAM element todetect biomolecules according to a preferred exemplary embodiment of thepresent invention is disclosed. As shown in FIG. 8, the MRAM element iscontinuously pulsed with an alternating current at a relatively highfrequency (step 810). The pulsing is accomplished by providing the pulsecurrent to a plurality of programming conductors associated with theMRAM element. The programming conductors are current lines that producethe applied magnetic switching field for switching the MRAM element. Thesupplied pulse current is amplitude modulated at a frequency rate thatis lower than the frequency of the pulse current (step 820). During themodulation cycle, the MRAM element is monitored for any change in state(step 830). The amplitude of the pulse current is gradually changeduntil the state of the MRAM element changes. As previously mentioned,the MRAM element state change will be a toggling between a highresistance level and a low resistance level. The state of the MRAMelement can be determined by measuring the resistance of the MRAMelement.

If the state of the MRAM element has not switched (step 840 equal “NO”),then the method returns to step 810 and continues as before, graduallychanging the amplitude current supplied to the MRAM device. Eventually,the switching threshold of the MRAM element will be reached, and theMRAM element will repeatedly switch back and forth from the “parallel”state to the “antiparallel” state (step 840 equal “YES”). By comparingthe time at the point of the state switch to the amplitude ramp (step850), the presence or non-presence of the magnetic beads can bedetermined (step 860). Whenever a magnetic bead is captured by thesensor, a shift in the switching transition time will be manifest. Themore beads captured by the sensor, the greater the shift in theswitching point for the MRAM element.

To provide a better signal-to-noise ratio (SNR) for the magnetoresistivesensor, it may be desirable to operate the switching current at arelatively high frequency and then perform signal averaging.Additionally, in order to isolate the sensor from external magneticsources, it may also be desirable to shield the sensor housingcontaining the MRAM element and fluid sample.

In order to take full advantage of the sensitivity of the MRAM elements,it is desirable to locate the selective chemistries for attachment anddetection as close as possible to the end of the MRAM bit. Usingself-assembling alkanethiols and photolithography techniques it ispossible to place the desired selective chemistries in close proximityto one end of the MRAM bit. By placing these chemistries at just one endof the structure, changes in the magnetic field resulting from beadattachment are maximized.

One possible methodology for creating the asymmetrical coating begins bysputtering the entire surface with a 10-100 angstrom layer of gold. Longchain alkanethiols (>16 carbon chain) are then self-assembled on thesputtered gold surface using standard process techniques. Portions ofthe resulting monolayer, covering one side of each bit, are then removedusing a photo mask and UV light. The exposed portions can be replacedwith alkanethiols from a second solution that have a desiredfunctionality at the distal end, thereby creating an asymmetricalmonolayer. Finally, probes that react with the desired functionality canbe added using a commercial arrayer or other probe-spotting device. Itshould be noted that a typical 100-micron spot deposited by a typicalarrayer would attach probes of the same type to many MRAM elements. Thesignals generated by these discrete elements could then be averagedtogether to add selectivity and specificity to an assay.

In addition to providing a convenient method for creating the selectivechemistries of the present invention, the previously describedalkanethiol monolayer is also useful for providing a thin (<10 nm)electrically insulating barrier to protect against certain corrosive,conducting analyte solutions. The insulting properties of the monolayercan be adjusted by increasing the length of the alkyl chains and alonger chain molecule is desirable for better insulation.

With the asymmetrical localized areas of activated sensor material, themagnetic beads will diffuse through the sample surrounding the sensorand some number of magnetic beads, attached to target molecules, willbecome attached to the surface of the sensor at the areas where theactivated sensor material has been deposited. The asymmetrical nature ofthe bead attachment will influence the magnetic switching field asdescribed above.

From the foregoing description, it should be appreciated that themethods and techniques disclosed herein present significant benefitsthat would be apparent to one skilled in the art. Furthermore, whilemultiple embodiments have been presented in the foregoing descriptions,it should be appreciated that a vast number of variations in theembodiments exist. Lastly, it should be appreciated that theseembodiments are preferred exemplary embodiments only, and are notintended to limit the scope, applicability, or configuration of theinvention in any way. Rather, the foregoing detailed descriptionsprovide those skilled in the art with a convenient road map forimplementing the preferred exemplary embodiments of the invention. Itbeing understood that various changes may be made in the function andarrangement of elements described in the exemplary preferred embodimentswithout departing from the spirit and scope of the invention as setforth in the appended claims.

1.-13. (canceled)
 14. An apparatus comprising: a magnetoresistivesensor, said magnetoresistive sensor comprising at least onemagnetoresistive random access memory (MRAM) element, wherein the MRAMelement may be in a first state or a second state; a surface, saidsurface comprising at least one activated area adapted to receive aplurality of magnetic beads, which when attached to said at least oneactivated area of said magnetoresistive sensor, alter at least oneswitching point in time from the first state to the second state, inresponse to an application of a switching current signal to the MRAMelement.
 15. The apparatus of claim 14 further comprising a housingcontaining said magnetoresistive sensor, said housing comprising amagnetic shield.
 16. The apparatus of claim 14 wherein said plurality ofmagnetic beads comprises a plurality of magnetite Fe₂0₃ beads.
 17. Theapparatus of claim 14 further comprising a modulated AC current appliedto said at least one MRAM element.
 18. The apparatus of claim 14 furthercomprising a plurality of target molecules, at least one of saidplurality of target molecules being attached to at least one of saidplurality of magnetic beads.
 19. The apparatus of claim 14 wherein saidat least one MRAM element comprises a multilayer magnetic element, saidmulti-layer magnetic element comprising: a substrate; a first electrodemultilayer stack; a spacer layer; and a second multilayer stack.
 20. Theapparatus of claim 19 wherein said first electrode multilayer stackcomprises: a base metal layer, said base metal layer being formed onsaid substrate; a seed layer, said seed layer being formed on said basemetal layer; a template layer, said template layer being formed on saidseed layer; an antiferromagnetic pinning layer, said antiferromagneticpinning layer being formed on said template layer; and a fixedferromagnetic layer, said ferromagnetic layer being formed on andexchange coupled with said antiferromagnetic pinning layer.
 21. Theapparatus of claim 19 wherein said second electrode multilayer stackcomprises: a free ferromagnetic layer; and a protective contact layer.22. The apparatus of claim 14 wherein said at least one activated areacomprises an asymmetrical monolayer positioned at one end of said atleast one MRAM element.
 23. A method of detecting at least one targetmolecule using a magnetoresistive random access memory (MRAM) element,wherein the MRAM element may be in a first state or a second state,comprising the steps of: monitoring at least one switching point in timefrom the first state to the second state, in response to the applicationof a switching current signal to the MRAM element; detecting a shift inthe at least one switching point in time from the first state to thesecond state, in response to at least one magnetic bead attaching to amagnetoresistive sensor incorporating said MRAM element; and using saidshift to identify the presence of at least one target molecule, saidtarget molecule being attached to said at least one magnetic bead. 24.The method of claim 23, wherein the switching current signal is pulsedat a predetermined frequency.
 25. The method of claim 23, wherein theswitching current signal is provided to a plurality of programmingconductors associated with the MRAM element.
 26. The method of claim 25,wherein the plurality of programming conductors are current lines thatproduce a magnetic switching field for switching the MRAM element fromthe first state to the second state.
 27. The method of claim 23, whereinsaid step of detecting the at least one target module further comprisesthe steps of: calculating a first differential between the at least oneswitching point in time and a second switching point in time; andcalculating a second differential between a third switching point intime and a fourth switching point in time.
 28. The method of claim 23further comprising modulating said switching current signal usingamplitude modulation.
 29. The method of claim 23 further comprising thestep of shielding said MRAM element from at least one external magneticfield.
 30. An apparatus for detecting at least one target molecule usinga magnetoresistive random access memory (MRAM) element, wherein the MRAMelement may be in a first state or a second state, comprising: means formonitoring at least one switching point in time from the first state tothe second state, in response to the application of a switching currentsignal to the MRAM element; means for detecting a shift in the at leastone switching point in time from the first state to the second state, inresponse to at least one magnetic bead attaching to a magnetoresistivesensor incorporating said MRAM element; and means for using said shiftto identify the presence of at least one target molecule, said targetmolecule being attached to said at least one magnetic bead.
 31. Theapparatus of claim 30, wherein the switching current signal is pulsed ata predetermined frequency.
 32. The apparatus of claim 30, wherein theswitching current signal is provided to a plurality of programmingconductors associated with the MRAM element.
 33. The apparatus of claim32, wherein the plurality of programming conductors are current linesthat produce a magnetic switching field for switching the MRAM elementfrom the first state to the second state.
 34. The apparatus of claim 39,wherein said means for detecting the at least one target module furthercomprises: means for calculating a first differential between the atleast one switching point in time and a second switching point in time;and means for calculating a second differential between a thirdswitching point in time and a fourth switching point in time.
 35. Theapparatus of claim 30 further comprising means for modulating saidswitching current signal using amplitude modulation.
 36. The apparatusof claim 23 further comprising means for shielding said MRAM elementfrom at least one external magnetic field.